A gallium nitride-based LED device with a vertical structure is provided to improve the scattering characteristic of photons generated from an active layer by including a plurality of dielectric patterns with a nano size in a gallium nitride layer. An n-type gallium nitride layer(150) is formed on the lower surface of an n-type electrode(160) wherein a plurality of dielectric patterns(200) with a nano size are formed in the n-type gallium nitride layer. An active layer(140) is formed on the lower surface of the n-type gallium nitride layer. A p-type gallium nitride layer(130) is formed on the lower surface of the p-type gallium nitride layer. A p-type reflection electrode(120) is formed on the lower surface of the p-type gallium nitride layer. A structure support layer(110) is formed on the lower surface of the p-type reflection electrode. The plurality of dielectric patterns with a nano size can be arranged periodically or non-periodically.
