发明名称 MAGNETORESISTIVE ELEMENT, MAGNETORESISTIVE RANDOM ACCESS MEMORY, ELECTRONIC CARD AND DATA TRANSFER DEVICE
摘要 <p>A magnetoresistive element which records information by supplying spin-polarized electrons to a magnetic material, includes a first pinned layer which is made of a magnetic material and has a first magnetization directed in a direction perpendicular to a film surface, a free layer which is made of a magnetic material and has a second magnetization directed in the direction perpendicular to the film surface, the direction of the second magnetization reversing by the spin-polarized electrons, and a first nonmagnetic layer which is provided between the first pinned layer and the free layer. A saturation magnetization Ms of the free layer satisfies a relationship 0>=Mst is a thickness of the free layer, A is a constant.</p>
申请公布号 KR100824471(B1) 申请公布日期 2008.04.22
申请号 KR20060101471 申请日期 2006.10.18
申请人 发明人
分类号 G11C11/15;H01L21/8246;H01L27/105;H01L29/82;H01L43/08;H01L43/10 主分类号 G11C11/15
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