发明名称 PLATE TYPE PREFERENTIAL OXIDATION REACTOR
摘要 A plate type preferential oxidation reactor with a new structure is provided to effectively remove CO, which is a main cause of poisoning of MEA(Membrane Electrode Assembly) for low temperatures, in the reforming gas by easily maintaining the optimal temperature by the natural cooling process according to catalyst characteristics. A preferential oxidation reactor(10) comprises: a plate type chamber having an inlet(12a) for flowing in gas and an outlet(12b) for flowing out a fluid; a distribution part for distributing a flow of the gas flown into the inlet; a main reaction part having a catalyst installed therein to convert carbon monoxide contained in the gas into other material; and a radiation part attached to an outer surface of the chamber, wherein the radiation part is installed on an outer side face of a rear part of the main reaction part on the gas flow. The chamber comprises: a first chamber including one portion having the inlet formed therein, an opening part, and an other portion having a flange(11a) formed on the edge of the opening part; and a second chamber including one portion having the outlet formed therein, an opening part, and an other portion having a flange(13a) formed on the edge of the opening part, wherein the flange of the first chamber and the flange of the second chamber are fixed in a state that the flanges are brought into contact with each other.
申请公布号 KR100824527(B1) 申请公布日期 2008.04.22
申请号 KR20070002531 申请日期 2007.01.09
申请人 SAMSUNG SDI CO., LTD. 发明人 SON, IN HYUK
分类号 C01B3/58;B01D53/86;C01B31/18 主分类号 C01B3/58
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