发明名称 Method for manufacturing a magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic in-stack bias layer
摘要 A magnetoresistive sensor having an in stack bias layer with an engineered magnetic anisotropy in a direction parallel with the medium facing surface. The in-stack bias layer may be constructed of CoPt, CoPtCr or some other magnetic material and is deposited over an underlayer that has been ion beam etched. The ion beam etch has been performed at an angle with respect to normal in order to form anisotropic roughness in form of oriented ripples or facets. The anisotropic roughness induces a uniaxial magnetic anisotropy substantially parallel to the medium facing surface in the hard magnetic in-stack bias layer deposited thereover.
申请公布号 US7360299(B2) 申请公布日期 2008.04.22
申请号 US20050097543 申请日期 2005.03.31
申请人 HITACHI GLOBAL STORAGE TECHNOLOGIES NETHERLANDS B. V. 发明人 CAREY MATTHEW JOSEPH;CHILDRESS JEFFREY ROBINSON;FULLERTON ERIC EDWARD;MAAT STEFAN
分类号 G11B5/127;H04R31/00 主分类号 G11B5/127
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