| 摘要 |
<p>A semiconductor device and a method for manufacturing the same are provided to improve characteristics by forming a spacer with a double structure of an oxide layer and a nitride layer. A gate insulating layer(20), a gate electrode(21), and an LDD region(30) are formed on a semiconductor substrate(10) including an isolation layer. A spacer of a double insulating layer structure is formed on the gate electrode. A source/drain region(70) is formed by using the spacer as a mask. A lateral surface of the gate electrode in contact with the insulating layer and an upper part of the LDD region are exposed by etching the insulating layer positioned inside the spacer. A salicide layer(80,81) is formed in the gate electrode and the source/drain regions. The spacer is removed. An interlayer dielectric(90) is formed on the salicide layer. A contact(100) connected to the salicide layer is formed by etching the interlayer dielectric.</p> |
