发明名称 CMP process
摘要 A method of forming a polished semiconductor structure comprises polishing a surface of a semiconductor structure by chemical mechanical polishing. Pressure applied to the surface is reduced during the polishing, or a rotation rate of a polishing surface relative to the surface is reduced during the polishing.
申请公布号 US7361602(B1) 申请公布日期 2008.04.22
申请号 US20050252933 申请日期 2005.10.18
申请人 CYPRESS SEMICONDUCTOR CORPORATION 发明人 ZAGREBELNY ANDREY
分类号 H01L21/461;B44C1/22;C23F1/00 主分类号 H01L21/461
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