| 摘要 |
<p>A method of forming a semiconductor device is provided to form fine patterns on a semiconductor substrate without leaving trace of overlay vernier in a subsequent process, by forming the overlay vernier on an uppermost hard mask layer in a peripheral circuit region adjacent a cell region, instead of forming in a scribe lane region. A method of forming fine patterns on a surface of a semiconductor substrate(100) including a cell region and a peripheral circuit region by using a double patterning process to form a mask pattern defining the fine pattern with two separate layouts that are not superposed on each other, the method comprises the steps of: forming a target etching layer(110) to form the fine patterns on the semiconductor substrate; forming a first hard mask layer(120) on the target etching layer, and a second hard mask layer on the first hard mask layer; forming a second hard mask pattern(135a) on the cell region by selectively etching the hard mask layer, and forming an overlay vernier(135b) for aligning the two layouts on the second hard mask layer of the peripheral circuit region only.</p> |
