发明名称 |
ESD protection circuit for a mixed-voltage semiconductor device |
摘要 |
An ESD protection circuit is implemented for a semiconductor device having a first circuit system operating with a first power supply voltage and a first complementary power supply voltage, and a second circuit system operating with a second power supply voltage and a second complementary power supply voltage. The ESD protection circuit includes a first diode having an anode coupled to the first power supply voltage and a cathode coupled to a first node connecting the first circuit system and the second circuit system for preventing a crosstalk of current between the first power supply voltage and the second complementary power supply voltage. A first MOS transistor module is coupled between the first node and the first complementary power supply for selectively creating a current path from the first node to the first complementary supply voltage for dissipating an ESD current during an ESD event.
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申请公布号 |
US7362555(B2) |
申请公布日期 |
2008.04.22 |
申请号 |
US20060509998 |
申请日期 |
2006.08.26 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
WU CHAU-NENG;LEE JIAN-HSING |
分类号 |
H02H9/00 |
主分类号 |
H02H9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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