发明名称 |
Semiconductor device and method for fabricating the same |
摘要 |
A semiconductor device of a dual-gate structure including a P-channel type field-effect transistor formed at a first region of a substrate and an N-channel type field-effect transistor formed at a second region of the substrate, includes a gate electrode including a polycrystalline silicon film continuously formed on the substrate to cover the first and second regions and a metal silicide film formed on the polycrystalline silicon film. The polycrystalline silicon film has a P-type part located on the first region and an N-type part coming into contact with the P-type part and located on the second region, and the P-type part is further doped with a heavier element than a P-type impurity that determines a conductivity type of the P-type part.
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申请公布号 |
US7361932(B2) |
申请公布日期 |
2008.04.22 |
申请号 |
US20060474391 |
申请日期 |
2006.06.26 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
TSUZUMITANI AKIHIKO |
分类号 |
H01L29/10;H01L29/76;H01L31/036;H01L31/112 |
主分类号 |
H01L29/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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