| 摘要 |
A sense amplifying circuit of a nonvolatile memory device capable of operating with a low voltage and a nonvolatile memory device including the same are provided to improve read operation speed, and to assure a stable current of a nonvolatile memory cell and to decrease disturb of the nonvolatile memory cell. A sense amplifying circuit(600) of a nonvolatile memory senses data stored in a first cell by comparing a current flowing through a first bit line connected to the first cell with a current flowing through a second bit line connected to a second cell. The sense amplifying circuit comprises a control part(640) and a sense amplifier. The control part controls the current flowing through the first bit line on the basis of a first reference voltage, and controls the current flowing through the second bit line on the basis of a second reference voltage. The sense amplifier senses data stored in the first cell, on the basis of the current flowing through the first bit line and the current flowing through the second bit line.
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