NON-VOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A memory device and a fabricating method thereof are provided to increase the integration of a non-volatile memory device by forming plural charge trapping layer patterns in one active pattern. An active pattern(30) is formed on a semiconductor substrate, and a first charge trapping layer pattern(15) is formed on a portion of the active pattern. A first gate electrode is formed on the first charge trapping layer pattern, and a second charge trapping layer pattern(25) is formed on a portion of a sidewall of the active pattern in a first direction. A second gate electrode(50) is formed on the second charge trapping layer pattern in the first direction. A source/drain region(70) is in the active pattern.