ISOLATION STRUCTURE, METHOD OF FORMING THE ISOLATION STRUCTURE, SEMICONDUCTOR DEVICE HAVING THE ISOLATION STRUCTURE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE HAVING THE ISOLATION STRUCTURE

摘要

An isolation structure, a forming method thereof, a semiconductor device having the same and a method for fabricating the semiconductor device are provided to easily bury trenches, while preventing deterioration of a tunnel oxide layer pattern and oxidization of a floating gate. Trenches are formed on a substrate(100), and an inner wall oxide layer(125) is formed on a sidewall and a bottom surface of the trench. A liner layer pattern(140b) having a first oxide layer pattern(130b) and a second oxide layer pattern(135b) is formed on the inner wall oxide layer. A barrier layer pattern(150b) is formed on the liner layer pattern, and an isolation layer pattern(160b) is formed on the barrier layer pattern to fill a portion of the trench. A compensation layer is formed on the liner layer pattern, the barrier layer pattern and the isolation layer pattern to fully fill the trench.