| 摘要 |
An image sensor and its manufacturing method are provided to improve a display the quality of an image generated from the image sensor by preventing the light emitted from a micro lens from entering into adjacent pixels. First wiring patterns(20) are formed on a photodiode structure(10) at positions corresponding to a boundary of pixels(P). A first insulating layer pattern(30) is formed to cover the first wiring patterns, and has first trenches disposed along an edge of each pixel. A first dielectric layer pattern(40) has a first air gap guard ring(45) disposed in the first trench(35). Second wiring pattern(50) are formed on the first insulating layer pattern at positions corresponding to the first wiring patterns. A second insulating pattern(60) is formed to cover the second wiring patterns, and has second trenches(65) disposed along the edge of each pixel. A second dielectric layer pattern(70) has a second air guard ring(75) disposed in the second trench. A color filter(80) is disposed on the second insulating pattern at a position corresponding to the pixel, and a micro lens(90) is disposed on each color filter.
|
