发明名称 METHOD FOR PRODUCING OXIDE LAYER ON ANODES OF OXIDE-SEMICONDUCTOR AND ELECTROLYTIC CAPACITORS
摘要 FIELD: producing oxide layer on anodes of oxide-semiconductor and electrolytic capacitors. ^ SUBSTANCE: proposed method depending on electrochemical treatment of anodes disposed in electrolyte filled bath includes molding of anodes under electrostatic condition, evaluation of electrolyte resistance at beginning of electrostatic condition continued until voltage across bath rises by voltage drop across electrolyte resistance, this being followed by transfer to voltage regulation in electrolyte filled bath while maintaining anode voltage at value equal to oxidation voltage; in the process electrolyte resistance in Ohm is found from formula Re = U0/Id, where U0 is voltage across electrolyte filled bath at beginning of electrostatic condition, V; Id is process-desired current, A; voltage across electrolyte filled bath is regulated using formula Ub = Uox + Ia x Re, where Ub is voltage across electrolyte filled bath, V; Uox is oxidation voltage, V; Ia is actual value of anode current, A; Re is electrolyte resistance, Ohm. ^ EFFECT: reduced time taken to produce oxide layer on anodes of oxide-semiconductor and electrolytic capacitors. ^ 3 cl, 3 dwg
申请公布号 RU2322722(C1) 申请公布日期 2008.04.20
申请号 RU20060146023 申请日期 2006.12.18
申请人 OTKRYTOE AKTSIONERNOE OBSHCHESTVO "ZAVOD "MEZON" 发明人 MERINOV LEV MATVEEVICH;GALASHINA NATALIJA VENIAMINOVNA;ALEKSANDROV VITALIJ EVGEN'EVICH;PROKOF'EV SERGEJ PAVLOVICH
分类号 H01G9/052 主分类号 H01G9/052
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