发明名称 |
Method for preparation of ferroelectric single crystal film structure using deposition method |
摘要 |
A film structure of a ferroelectric single crystal which can be beneficially used in the fabrication of high-performance electric and electronic parts and devices is prepared by forming an electrode layer having a perovskite crystal structure on a substrate made of a silicon or ferroelectric single crystal optionally polished to have a off-axis crystal structure, and epitaxially growing a layer of a ferroelectric single crystal thereon by pulsed laser deposition (PLD) or metallorganic chemical vapor deposition (MOCVD). |
申请公布号 |
HK1085306(A1) |
申请公布日期 |
2008.04.11 |
申请号 |
HK20060105247 |
申请日期 |
2006.05.03 |
申请人 |
IBULE PHOTONICS INC. |
发明人 |
JAEHWAN EUN;SANG-GOO LEE;HYEONGJOON KIM;MINCHAN KIM |
分类号 |
H01L;C30B23/02;C30B25/02;C30B29/24;C30B29/30;C30B29/32;C30B29/34;H01L21/316;H01L21/762;H01L41/08;H01L41/09;H01L41/18;H01L41/22;H01L41/29;H01L41/316;H01L41/337;H01L41/39 |
主分类号 |
H01L |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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