| 摘要 |
A small-size CMOS image sensor with an improved color cross talk and a method for fabricating the same are provided to implement the small size and excellent red response by employing a p-type doping layer arranged under green or/and blue photo diodes and except under a red photo diode. A blue filter(201), a green filter(202), and a red filter(203) are arranged over an interlayer transparent dielectric(208). A p+ type doping layer(217) and an n-type doping layer(210) configure a pinned photo diode. The p+ type doping layer includes a lateral side of an STI region(206) and an STI bottom region to be extended across an entire exposed surface of a silicon. The STI region is filled with an oxide(207). An oxide layer(205) covers the entire surface of the silicon and is downwardly extended toward a polysilicon gate(208). An n+ type doping(209) forms a floating diffusion node connected to a source follower. A p-type doping layer(212) is arranged under the blue and green filters. |
