发明名称 PROXIMITY PROCESSING USING CONTROLLED BATCH VOLUME WITH AN INTEGRATED PROXIMITY HEAD
摘要 A proximity processing using controlled batch volume with an integrated proximity head is provided to reduce the operation cost in manufacturing a semiconductor device by minimizing the use of chemicals during treating a substrate. A plating assembly(120) comprises a delivery unit(200A), a receiving unit(200B) and a path. The delivery unit includes an inner chamber and an outer surface, and has an opening interfaced by a first porous insert. The receiving unit includes an inner volume and an outer surface, and has an opening interfaced by a second porous insert. The path is defined as a distance by the delivery unit and the receiving unit. The second porous insert is substantially aligned with the first porous insert to define a plating meniscus. As a substrate(150) moves along the plating meniscus, the substrate is plated with plating solution(128) of the plating meniscus.
申请公布号 KR20080031838(A) 申请公布日期 2008.04.11
申请号 KR20070100524 申请日期 2007.10.05
申请人 LAM RESEARCH CORPORATION 发明人 WOODS CARL A.;WYLIE JACOB;DORDI YEZDI N.;MARASCHIN ROBERT
分类号 C25D17/00 主分类号 C25D17/00
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