| 摘要 |
A method for manufacturing a semiconductor device is provided to improve adhesion property with respect to an interlayer dielectric and to remove a peeling defect by performing a plasma treatment on an SRO(Silicon Rich Oxide) layer. A metal line(120) is formed on a substrate(110). A lower interlayer dielectric is formed on the substrate including the metal line. A plasma treatment is performed on the lower interlayer dielectric. A SRO layer(130) is formed on the substrate on which the metal line is formed. A plasma treatment is performed on the entire surface of the substrate on which the SRO layer is formed. An interlayer dielectric(140) is formed on the plasma treated SRO layer. The plasma treatment is one out of an oxygen plasma treatment, a nitrogen monoxide plasma treatment, a mixed gas plasma treatment of nitrogen monoxide. The plasma treatment improves adhesion property with respect to the interlayer dielectric.
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