发明名称 FABRICATING METHOD OF SEMICONDUCTOR NANO STRUCTURE
摘要 A method for fabricating a semiconductor nano structure is provided to easily adjust the focus of laser and maintain uniformity of a sample by performing a laser ablation process on a compound semiconductor powder dispersed to an aqueous medium. Metal oxide powder is dispersed to an aqueous solution containing surfactant(10). A laser beam is injected to the aqueous solution to perform an ablation process on the metal oxide powder(20). A dispersion solution of a compound semiconductor nano particles is gathered from the ablated aqueous solution(30). The gathered dispersion solution is dried to collect the compound semiconductor nano particles(40). While the laser beam is injected to the aqueous solution, ultrasonic vibration can be applied to the aqueous solution.
申请公布号 KR100821357(B1) 申请公布日期 2008.04.11
申请号 KR20060098129 申请日期 2006.10.09
申请人 SEOUL NATIONAL UNIVERSITY INDUSTRY FOUNDATION;SAMSUNG ELECTRONICS CO., LTD. 发明人 KANG, WEE KYUNG;LEE, JAE HOON;CHUNG, YOUNG KEUN;PARK, SUNG TAE
分类号 H01L21/20 主分类号 H01L21/20
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