| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate for a compound semiconductor device which has a high breakdown strength and a low loss, and is used suitably for a HEMT, etc. in the compound semiconductor device having a nitride semiconductor monocrystalline film, and to provide the compound semiconductor device using the same. SOLUTION: On the substrate for the compound semiconductor device formed by successively laminating a multilayer monocrystalline layer 3 in which an Al<SB>x</SB>Ga<SB>1-x</SB>N monocrystalline layer (0<x≤1) 3a with a thickness of 3-250 nm and an Al<SB>y</SB>Ga<SB>1-y</SB>N monocrystalline layer (0≤y<1, x≠y) 3b with a thickness of 3-250 nm are alternately repeatedly laminated in 5-500 pairs, a GaN monocrystalline layer 4 with a thickness of 0.5-5μm, and a device active layer 5 on a conductive SiC monocrystal 2, a Schottky electrode and an ohmic electrode 6 are formed. COPYRIGHT: (C)2008,JPO&INPIT
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