| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for precisely acquiring a body-source or body-drain capacitance of an SOI device which does not have a body contact and to provide evaluation TEG for realizing the method. SOLUTION: In capacitance measuring TEG, a first TEG is provided with a first basic part having the same shape and size as a gate electrode of FET being an object for capacitance acquirement and a first addition part added at one end of the first basic part. A second TEG is provided with a second basic part having the same shape and size as the first basic part, a second additional part which is added to one end of the second basic part and has the same shape and size as the first additional part and a third additional part which is added to the other end of the second basic part and has the same shape and size as the second additional part. A body-source or body-drain capacitance of FET being the object for capacitance acquirement is estimated from a difference between the body-source or body-drain capacitances of first TEG and second TEG (S04). COPYRIGHT: (C)2008,JPO&INPIT |
