发明名称 |
Solid-state imaging device and electronic device |
摘要 |
A solid-state imaging device is provided. The solid-state imaging device includes an imaging area including a plurality of pixels arrayed in a two-dimensional matrix. Each of the pixels includes a photodiode having a first conductivity-type electric charge accumulation area and a transistor for reading electric charges obtained at the photodiode; and an independent first conductivity-type region provided to at least part of the plurality of pixels and isolated from the photodiode and the transistor. The independent first conductivity-type region is provided continuously between adjacent pixels and nonuniformly within each pixel.
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申请公布号 |
US2008084490(A1) |
申请公布日期 |
2008.04.10 |
申请号 |
US20070900846 |
申请日期 |
2007.09.13 |
申请人 |
SONY CORPORATION |
发明人 |
MASAGAKI ATSUSHI |
分类号 |
H01L27/146;H01L31/10;H04N5/335;H04N5/353;H04N5/369;H04N5/374 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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