发明名称 |
Decoding method in an NROM flash memory array |
摘要 |
A read operation method is provided for a flash memory array having a plurality of memory cells, wordlines, even bitlines, odd bitlines and a plurality of bitline transistors. The method includes pre-charging the plurality of even bitlines to about Vcc/n and pre-charging the plurality of odd bitlines to ground. The current flowing to/from a first bit location in each of the memory cells is selectively sensed. A logical state is determined from the sensed current for the first bit location in each of the memory cells. The method also includes pre-charging the plurality of odd bitlines to about Vcc/n and pre-charging the plurality of even bitlines to ground. The current flowing to/from a second bit location in each of the memory cells is selectively sensed. A logical state is determined from the sensed current for the second bit location in each of the memory cells.
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申请公布号 |
US2008084753(A1) |
申请公布日期 |
2008.04.10 |
申请号 |
US20060534696 |
申请日期 |
2006.09.25 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
KIM JONGOH;KWON YI-JIN;LIU CHENG-JYE |
分类号 |
G11C16/06;G11C11/34 |
主分类号 |
G11C16/06 |
代理机构 |
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地址 |
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