| 摘要 |
Provided is an exposure method using near field light which can form a pattern finer than a mask pitch and avoid difficulty when forming a mask for fine lithography at unity magnification. The exposure method is configured such that a mask including a light shielding film with a fine opening less in size than a wavelength of exposure light is closely contacted with a photosensitive thin film including a silane coupling agent on a substrate, and light of a wavelength at which the photosensitive thin film has sensitivity for propagating light is irradiated to perform exposure, wherein the exposure is performed with the light at such an exposure amount that an exposed portion in the photosensitive thin film just below an edge portion of the light shielding film and a non-exposed portion in the photosensitive thin film just below a central portion of the fine opening are formed coexistently.
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