TECHNIQUE FOR IMPROVED DAMAGE CONTROL IN A PLASMA DOPING (PLAD) ION IMPLANTATION
摘要
A technique for improved damage control in plasma doping (PLAD) ion implantation is disclosed. According to a particular exemplary embodiment, the technique may be realized as a method for improved damage control in plasma doping (PLAD) ion implantation. The method may comprise placing a wafer on a platen in a chamber. The method may also comprise generating a plasma in the chamber. The method may additionally comprise implanting at least a portion of ions produced from the plasma into the wafer, wherein the wafer is cooled to a temperature no higher than 0° C during ion implantation, and wherein a dose rate associated with the portion of ions is at least 1 x 10<SUP>13</SUP> atoms/cm<SUP>2</SUP>/second.
申请公布号
WO2008042647(A2)
申请公布日期
2008.04.10
申请号
WO2007US79387
申请日期
2007.09.25
申请人
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.;SINGH, VIKRAM;RENAU, ANTHONY;AREVALO, EDWIN, A.