| 摘要 |
<P>PROBLEM TO BE SOLVED: To increase the soft error immunity of a semiconductor device. <P>SOLUTION: A semiconductor device comprises at least two inverter circuits consisting of a transistor of a second conductivity type that is formed by a diffusion layer of the second conductivity type formed in a semiconductor layer of a first conductivity type and a transistor of the first conductivity type that is formed by a diffusion layer of the first conductivity type formed in a semiconductor layer of the second conductivity type. The diffusion layer of the second conductivity type is divided into multiple regions by element isolation regions, and the multiple regions are connected by first metal wiring. The diffusion layer of the first conductivity type is divided into multiple regions by element isolation regions, and the multiple regions are connected by second metal wiring. <P>COPYRIGHT: (C)2008,JPO&INPIT |
