| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a new wiring structure capable of securing a bonding strength of high reliability in addition to an insurance of a high current-carrying capacitance and a radiative nature for a semiconductor device in which a friction stir bonding between semiconductor chip/wiring member is carried, and a wiring bonding method and a friction stir bonding apparatus which are applied to the wiring structure. <P>SOLUTION: In the semiconductor device constituted by piling and bonding the wiring member on a top face main electrode of the semiconductor chip mounted on an insulating substrate by a friction stir bonding method, plural sheets of ribbon-like metal foils 9, each having a sheet thickness of 10 to 100 μm, are combined into groups and are used as wiring members (lead frame). In a bonding portion between the semiconductor chip/wiring member, overlap widths 9a of the metal foil 9 are shifted before and behind sheet by sheet and are piled on a metal film 3a formed on an electrode surface of the semiconductor chip, and friction stir bonding of multiple points S1 to S3 is carried out in the shape of a spot by forcing a rotary tool 7 rotating at a high speed into the overlap widths of the metal foil by sheet by sheet from an upside. <P>COPYRIGHT: (C)2008,JPO&INPIT |
