| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a through electrode and its manufacturing method without changing a standard manufacturing condition for the semiconductor device. SOLUTION: The through electrode is formed at first. After that the semiconductor device is formed by the standard manufacturing method. The side of the through electrode is insulated from a semiconductor substrate by an insulation film, and the surface is coated with a protection insulation film. COPYRIGHT: (C)2008,JPO&INPIT
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