发明名称 MAGNETORESISTIVE EFFECT ELEMENT, ITS MANUFACTURING METHOD, AND MAGNETIC RECORDING EQUIPMENT USING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a magnetoresistive effect element in which the strength of a bias magnetic field applied from a ferromagnetic layer to a free magnetic layer can be adjusted after the ferromagnetic layer is formed, and to provide its manufacturing method and a magnetic recording device using the same. SOLUTION: The magnetoresistive effect element 11 is composed of a free magnetic layer 12, a fixed magnetic layer 13, an antiferromagnetic layer 14 fixing the fixed magnetic layer 13, a non-magnetic layer 15 located between the free magnetic layer 12 and fixed magnetic layer 13, and a ferromagnetic layer 16 which applies a vertical bias magnetic field to the free magnetic layer 12. The characteristic of the magnetoresistive effect element 11 is evaluated after an initial magnetization is performed, and the magnetoresistive effect element is magnetized again in the direction different from that of the initial magnetization if necessary on the basis of the above evaluation result, whereby the strength of the bias magnetic field is adjusted. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008085080(A) 申请公布日期 2008.04.10
申请号 JP20060263418 申请日期 2006.09.27
申请人 FUJITSU LTD 发明人 AKIMOTO HIDEYUKI;MUKOYAMA NAOKI
分类号 H01L43/08;G11B5/39;H01L21/8246;H01L27/105;H01L43/12 主分类号 H01L43/08
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