发明名称 SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING SYSTEM, PROGRAM, AND STORAGE MEDIUM
摘要 PROBLEM TO BE SOLVED: To reduce damage to an interlayer insulating film when forming a structure with a first wiring and a second wiring embedded in the interlayer insulating film, where the second wiring is laminated on the first wiring and electrically connected to the first wiring. SOLUTION: After forming a first pattern corresponding to the first wiring on a first sacrificial film, a metal is embedded in the first pattern. Next, after forming a second sacrificial film on the first sacrificial film, a second pattern corresponding to a second wiring is formed and a metal is embedded in the second pattern. After that, the first sacrificial film and the second sacrificial film are removed to form the first wiring and the second wiring. Furthermore, the films are covered with barrier films and then the interlayer insulating film is formed so as to cover the barrier films. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008085175(A) 申请公布日期 2008.04.10
申请号 JP20060265285 申请日期 2006.09.28
申请人 TOKYO ELECTRON LTD 发明人 MAEKAWA KAORU
分类号 H01L21/3205;H01L21/768;H01L23/522 主分类号 H01L21/3205
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