发明名称 |
Semiconductor structure with high-voltage sustaining capability and fabrication method of the same |
摘要 |
A semiconductor structure with high-voltage sustaining capability. A semiconductor structure with high-voltage sustaining capability includes a first well region of a first conductivity type. A pair of second well regions of a second conductivity type opposite to the first conductivity type are respectively disposed adjacent to the first well region and an anti-punch through region of the first conductivity type is disposed in at least the lower portion of the first well region to increase the doping concentration therein. Due to the ion supplementation of the anti-punch through region, the size of a semiconductor structure can be further reduced without affecting the HV sustaining capability and undesired effects such as punch-through effects can be prevented.
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申请公布号 |
US2008085579(A1) |
申请公布日期 |
2008.04.10 |
申请号 |
US20070896883 |
申请日期 |
2007.09.06 |
申请人 |
WU CHEN-BAU;LUI FANG-CHENG;HSU SHUN-LIANG |
发明人 |
WU CHEN-BAU;LUI FANG-CHENG;HSU SHUN-LIANG |
分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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