HIGH POWER INSULATED GATE BIPOLAR TRANSISTORS

摘要

An insulated gate bipolar transistor (IGBT) includes a substrate (12) having a first conductivity type, a drift layer (16) having a second conductivity type opposite the first conductivity type, and a well region (18) in the drift layer and having the first conductivity type. An epitaxial channel adjustment layer (40) is on the drift layer and has the second conductivity type. An emitter region (22) extends from a surface of the epitaxial channel adjustment layer through the epitaxial channel adjustment layer and into the well region. The emitter region has the second conductivity type and at least partially defines a channel region in the well region adjacent to the emitter region. A gate oxide layer (26) is on the channel region, and a gate (28) is on the gate oxide layer. Related methods are also disclosed.