| 摘要 |
An integrated circuit of embodiments of the invention comprises a hybrid orientation substrate (600), comprising first areas having a first crystalline orientation and second areas having a second crystalline orientation. The first crystalline orientation of the first areas is not parallel or perpendicular to the second crystalline orientation of the second areas. The integrated circuit further comprises first type devices (620) on the first areas and second type devices (630) on the second areas, wherein the first type devices (620) are parallel or perpendicular to the second type devices (630), and the first type devices (620) comprise a first current flow (621) and a second current flow (622) orthogonal to each other, wherein the carrier mobilities of the first (621) and second (622) current flows are equal to each other. Specifically, the first type devices comprise p-type field effect transistors (PFETs) and the second type devices comprise n-type field effect transistors (NFETs). |
