发明名称 PLASMA OXIDIZING METHOD, PLASMA PROCESSING APPARATUS, AND STORAGE MEDIUM
摘要 <p>A plasma oxidizing method includes a step of placing an object to be processed and having a surface containing silicon on a susceptor disposed in a processing vessel of a plasma processing apparatus, a step of producing a plasma from a processing gas containing oxygen in the processing vessel, a step of supplying high-frequency electric power to the susceptor and applying a high-frequency bias to the object to be processed when the plasma is produced, and a step of forming a silicon oxide film by oxidizing silicon in the surface of the object to be processed by the plasma.</p>
申请公布号 WO2008041600(A1) 申请公布日期 2008.04.10
申请号 WO2007JP68755 申请日期 2007.09.27
申请人 TOKYO ELECTRON LIMITED;SHIOZAWA, TOSHIHIKO;KABE, YOSHIRO;KOBAYASHI, TAKASHI;ADACHI, HIKARU;KITAGAWA, JUNICHI;YAMAMOTO, NOBUHIKO 发明人 SHIOZAWA, TOSHIHIKO;KABE, YOSHIRO;KOBAYASHI, TAKASHI;ADACHI, HIKARU;KITAGAWA, JUNICHI;YAMAMOTO, NOBUHIKO
分类号 H01L21/316;H01L21/76;H01L29/78 主分类号 H01L21/316
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