PLASMA OXIDIZING METHOD, PLASMA PROCESSING APPARATUS, AND STORAGE MEDIUM
摘要
<p>A plasma oxidizing method includes a step of placing an object to be processed and having a surface containing silicon on a susceptor disposed in a processing vessel of a plasma processing apparatus, a step of producing a plasma from a processing gas containing oxygen in the processing vessel, a step of supplying high-frequency electric power to the susceptor and applying a high-frequency bias to the object to be processed when the plasma is produced, and a step of forming a silicon oxide film by oxidizing silicon in the surface of the object to be processed by the plasma.</p>
申请公布号
WO2008041600(A1)
申请公布日期
2008.04.10
申请号
WO2007JP68755
申请日期
2007.09.27
申请人
TOKYO ELECTRON LIMITED;SHIOZAWA, TOSHIHIKO;KABE, YOSHIRO;KOBAYASHI, TAKASHI;ADACHI, HIKARU;KITAGAWA, JUNICHI;YAMAMOTO, NOBUHIKO