发明名称 |
METHOD FOR PLASMOCHEMICAL TREATMENT OF MATERIALS |
摘要 |
A method for treatment of plasmochemical metal material consists in etching semi-conductive plates made in a cylindrical reactor, wherein plasma of high-frequency discharge is excited at low pressure of plasma-supporting gas by means of formation in reactor of high-frequency field with E intensity that cause appearance of plasma chemically active particles having N concentration. Plates are arranged in special plate holders at a distance h one from another. Moreover, the h distance is determined proportional to change of the ratio E/N. |
申请公布号 |
UA31602(U) |
申请公布日期 |
2008.04.10 |
申请号 |
UA20070014875U |
申请日期 |
2007.12.27 |
申请人 |
VINNYTSIA NATIONAL TECHNICAL UNIVERSITY |
发明人 |
KRAVCHENKO YURII STEPANOVYCH |
分类号 |
H01L21/302 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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