发明名称 METHOD FOR PLASMOCHEMICAL TREATMENT OF MATERIALS
摘要 A method for treatment of plasmochemical metal material consists in etching semi-conductive plates made in a cylindrical reactor, wherein plasma of high-frequency discharge is excited at low pressure of plasma-supporting gas by means of formation in reactor of high-frequency field with E intensity that cause appearance of plasma chemically active particles having N concentration. Plates are arranged in special plate holders at a distance h one from another. Moreover, the h distance is determined proportional to change of the ratio E/N.
申请公布号 UA31602(U) 申请公布日期 2008.04.10
申请号 UA20070014875U 申请日期 2007.12.27
申请人 VINNYTSIA NATIONAL TECHNICAL UNIVERSITY 发明人 KRAVCHENKO YURII STEPANOVYCH
分类号 H01L21/302 主分类号 H01L21/302
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