发明名称 ORGANIC MEMORY DEVICE AND METHOD OF FORMING THEREOF
摘要 <p>An organic memory device and a forming method thereof are provided to improve adhesive strength between an electrode and a memory layer, and interface property by applying an SAM(Self-Assembled Monolayer) and a memory cell which includes the memory layer capable of switching two resistance states. An organic memory device comprises an SAM(Self-Assembled Monolayer)(30) positioned between a first and a second electrodes(20,50), and a memory layer(40). The memory layer is made of an organic material, and is capable of switching at least two resistance states. And the memory layer is able to be a conductive state, nonconductive state or any state by a method which is controlled by the light irradiation or an external electric field which is added through the two electrodes.</p>
申请公布号 KR20080031542(A) 申请公布日期 2008.04.10
申请号 KR20060097503 申请日期 2006.10.04
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 YASUE TAKEHIRO;CHO, BYEONG OK;LEE, MOON SOOK
分类号 H01L27/115;H01L21/8247 主分类号 H01L27/115
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