发明名称 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a positive resist composition capable of highly satisfying all of PEB temperature dependency, line edge roughness (LWR), dark/bright pattern profile difference and development defects, and a pattern forming method using the positive resist composition. <P>SOLUTION: The positive resist composition comprises (A) a resin containing a repeating unit (A1) having a lactone structure and a cyano group and a repeating unit (A2) having a lactone structure and no cyano group, and having solubility in an alkali developer increased by the action of an acid, (B) a compound capable generating an acid upon irradiation with an actinic ray or radiation and (C) a solvent. The pattern forming method using the positive resist composition is also provided. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008083369(A) 申请公布日期 2008.04.10
申请号 JP20060263059 申请日期 2006.09.27
申请人 FUJIFILM CORP 发明人 TARUYA SHINJI;TAGUCHI NORIHIKO
分类号 G03F7/039;C08F220/34;H01L21/027 主分类号 G03F7/039
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