| 摘要 |
PROBLEM TO BE SOLVED: To reduce power consumption of a power semiconductor device. SOLUTION: An IGBT51 is provided with a low concentration N-type silicon substrate 1, an N-type silicon layer 2 having an impurity concentration of approximately 1,0<SP>18</SP>/cm<SP>3</SP>formed in a region at a predetermined depth from a first principal plane 1S1 of the silicon substrate 1, a high concentration P-type collector region 20 composed of SiGe formed on the first principal plane 1S1, and collector electrode 6C formed on an opposite surface to the N-type silicon layer 2 of the collector region 20. The IGBT51 is also provided with a low concentration P-type base region 7, emitter region 8, and high concentration P-type silicon region 9 formed in a region at predetermined depths from a second principal plane 1S2 of the silicon substrate 1, respectively, trench 30 exceeding the P-type base region 7 from the second principal plane 1S2 to the inside of an N-base region 1A, gate electrode 10 filled in the trench 30, and metal electrode 6G connected with the gate electrode 10. A collector junction is composed of a hetero junction (P<SP>+</SP>-SiGe/ N<SP>-</SP>-Si). COPYRIGHT: (C)2008,JPO&INPIT
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