| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser element which can suppress a reduction of a kink level without complicating a process, and can spread a horizontal radiation angle more than before. SOLUTION: The semiconductor laser element is configured to contain a first conductive type semiconductor substrate 1, a first conductive type clad layer 2 formed on the first conductive type semiconductor substrate, an active layer 3 formed on the first conductive type clad layer, a second conductive type clad layer 4 formed on the active layer, a ridge 10 formed on the second conductive type clad layer, and a first conductive type current block layer 12 formed so as to bury a step of the ridge on both the sides of the ridge. In the first conductive type current block layer, its refractive index is lower than and a band gap is larger than that of the active layer, and its thickness is in a range of 0.11μm to 0.30μm. COPYRIGHT: (C)2008,JPO&INPIT
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