发明名称 COMPOSITION FOR CLEANING SEMICONDUCTOR MANUFACTURING APPARATUS AND CLEANING METHOD EMPLOYING THE SAME
摘要 PROBLEM TO BE SOLVED: To remove deposited adherents without imposing damage on aluminum and an anodized aluminum oxide base material as a process chamber base material as a semiconductor device. SOLUTION: A semiconductor manufacturing apparatus is cleaned without imposing damage on a base material by using a composition for cleaning the semiconductor manufacturing apparatus which contains a kind of a fluoride selected from among a sodium fluoride, a potassium fluoride, a lithium fluoride and an ammonium fluoride; a citric acid; and a pH adjuster represented by ammonia as required. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008084884(A) 申请公布日期 2008.04.10
申请号 JP20060259561 申请日期 2006.09.25
申请人 TOSOH CORP 发明人 HARA YASUSHI;TAKAHASHI FUMIHARU
分类号 H01L21/3065 主分类号 H01L21/3065
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