| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has a transistor having polysilicon for a gate electrode in a trench, the semiconductor device being characterized in that a step owing to a polysilicon film is not formed on a semiconductor device surface and low contact resistance is obtained in a gate contact portion for acquiring a potential of the polysilicon for the gate electrode. SOLUTION: On the surface of the semiconductor device 3, a recessed portion 19 for gate contact formed to a width larger than that of the trench 7 continuously to the trench 7 and the gate contact portion 17 having the polysilicon 21 for gate contact formed in the recessed portion 19 for gate contact are provided at positions different from a cell portion 5 having the polysilicon 11 for the gate electrode in the trench 7. In an inter-layer insulating film 23 on the polysilicon 21 for gate contact, a connection hole 25g for a gate is formed to a width larger than that of the trench 7. A polysilicon film is not formed above the surface of the semiconductor substrate 3. COPYRIGHT: (C)2008,JPO&INPIT |
