| 摘要 |
A predetermined pattern containing a plurality of gate patterns, in the process of formation thereof, is classified into fine gate patterns and the other patterns (S 102 ), and a hard mask film is formed on a process target film (S 106 ). Next, a first resist film having a fine first pattern is formed on the hard mask film, and the hard mask film is then patterned (S 108 ). Thereafter, a resist film having a separate pattern is formed on the hard mask film, and a process target film is selectively dry-etched through the hard mask film and the resist film used as masks (S 110 and S 112 ).
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