PROCESSING SYSTEM CONTAINING A HOT FILAMENT HYDROGEN RADICAL SOURCE FOR INTEGRATED SUBSTRATE PROCESSING

摘要

A processing system (1, 504B) and method for integrated substrate processing in a substrate processing tool (500). The processing system (1, 504B) contains a substrate holder (20) configured for supporting and controlling the temperature of the substrate (25), a hot filament hydrogen radical source (31 ) for generating hydrogen radicals, and a controller (70, 510) configured for controlling the processing system (1, 504B). The hot filament hydrogen radical source (31 ) includes a showerhead assembly (30) containing an internal volume (37) and a showerhead plate (35) having gas passages (33) facing the substrate (25) for exposing the substrate (25) to the hydrogen radicals, and at least one meta! wire filament (59, 59a, 59b, 59c) within the interna! volume (37) to thermaliy dissociate H2 gas into the hydrogen radicals. The integrated process includes pretreating exposed surfaces of an etch feature (105) in a dielectric film (113, 115, 624, 626) and an exposed metal interconnect pattern (111 A, 622A) formed underneath the etch feature (105) with a flow of hydrogen radicals generated by thermal decomposition of H2 gas by a hot filament hydrogen radical source (31 ) separated from the substrate (25) by a showerhead plate (35) containing gas passages (33) facing the substrate (25). The integrated process further includes depositing a barrier metal film (116, 628) over the pretreated exposed surfaces, and forming a Cu metal film (113) on the barrier metal film (116, 628).