FORMING METHOD OF CARBON NANOTUBE INTERCONNECTION, AND FORMING METHOD OF SEMICONDUCTOR ELEMENT INTERCONNECTION USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a method of forming a carbon nanotube interconnection which does not cause interface breakdown phenomenon, and a method for forming a semiconductor element interconnection using thereof. SOLUTION: This method of forming a carbon nanotube interconnection comprises the steps of: forming an oxide metal film on a substrate; forming an insulating film pattern having an opening that exposes the surface of the oxide metal film; forming a catalyst metal film pattern for carbon nanotube growth from the oxide metal film that is exposed in the opening; and forming a carbon nanotube interconnection by growing the carbon nanotubes from the catalyst metal film pattern. The method of forming a carbon nanotube interconnection can prevent the phenomenon of growing the carbon nanotubes between the insulating film pattern and the catalyst metal film pattern. COPYRIGHT: (C)2008,JPO&INPIT