| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a substrate processing apparatus, a substrate processing method, and a method of manufacturing a semiconductor device whereby a natural oxide film or contaminants such as an organic matter can be removed at low temperatures to solve the problem of a method of removing the natural oxide film at high temperatures. <P>SOLUTION: The method of manufacturing the semiconductor device includes the steps of: carrying a substrate into a processing chamber, the substrate having a partially exposed silicon surface; heating the inside of the processing chamber; performing pretreatment of supplying at least silane gas, halogen gas, and hydrogen gas into the processing chamber, removing a natural oxide film or contaminants at least on the silicon surface, and growing an epitaxial film on the silicon surface; and supplying gas containing at least silicon into the processing chamber after the pretreatment process to grow another epitaxial film on the epitaxial film. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
