| 摘要 |
PROBLEM TO BE SOLVED: To prevent the higher resistance of a word line when a silicide is formed, the increasing nonuniformity of resistance due to heterogeneity in a metallic silicide film, and deterioration due to agglomeration, etc. SOLUTION: A semiconductor memory comprises: a memory cell unit MCU having at least one memory cell MC with a structure where a floating gate 6 and control gates 10, 12, 16, 17 are laminated via an insulating film 5 on a semiconductor substrate, and also having at least one selection gate transistor S connected to the memory cell MC; a common source line SRC connected to one end of the memory cell unit MCU; and a bit line BL connected to the other end of the memory cell unit MCU. The control gates are formed to have a width being larger than that of the floating gate 6 in the longitudinal direction of the gates. COPYRIGHT: (C)2008,JPO&INPIT
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