SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the semiconductor device having a proper threshold voltage even when a metal having a work function higher than a predetermined value is employed as a gate electrode for a P-channel MOSFET (metal oxide semiconductor field effect transistor). SOLUTION: The semiconductor device of this invention is a semiconductor device comprising an N-channel MOSFET and a P-channel MOSFET while a gate electrode for the P-channel MOSFET is provided with a lamination structure comprising a first conductive film 110a containing oxygen of a first concentration, a second conductive film 110b containing oxygen of a second concentration higher than the first concentration and a third conductive film 110c containing oxygen of a third concentration lower than the second concentration. COPYRIGHT: (C)2008,JPO&INPIT