| 摘要 |
PROBLEM TO BE SOLVED: To reduce the parasitic capacitance of the electrode pad of an element where a mesa stripe including an optical waveguide layer is buried by a semi-insulating InP based embedding layer having an upper surface consisting of a flat portion, an inclining portion and a fine growth portion and the electrode pad is formed on the embedding layer 4. SOLUTION: A dummy mesa stripe 8 extending in parallel with a plurality of mesa stripes 2 is formed along the mesa stripes 2, the space between the dummy mesa stripes 8 is filled with the flat portion 4a of an embedding layer 4, and an electrode pad 7 is formed thereon. Since the flat portion 4a is formed flatly with the thickness of the dummy mesa stripe 8, distance between the electrode pad 7 and the substrate 1 is lengthened thus reducing parasitic capacitance between them. Consequently, an optical semiconductor element excellent in high frequency characteristics is obtained. COPYRIGHT: (C)2008,JPO&INPIT
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