| 摘要 |
A mechanical-to-electrical sensing structure has first and second movable blocks formed in a handle layer. A first hinge is coupled to the first and second movable blocks and configured to resist loads other than flexing of the first hinge. The first hinge is formed in the handle layer. A first gauge is separated from the first hinge and aligned to provide that a moment tending to rotate one of the first or second blocks relative to the other about the first hinge applies a tensile or compressive force along a length of the first gauge. The first gauge is formed from a device layer with an oxide between the device and handle layers. The sensing structure is made from an SOI wafer, and the first gauge is protected during an etching away of handle material beneath the first gauge by an oxide between the device and handle layers and an etch-resistant oxide or nitride on exterior surfaces of the first gauge.
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