NITRIDE SEMICONDUCTOR HETEROSTRUCTURES AND RELATED METHODS

摘要

Semiconductor structures and devices based thereon include an aluminum nitride single-crystal substrate and at least one layer epitaxially grown thereover. The epitaxial layer may comprise at least one of AlN, GaN, InN, or any binary or tertiary alloy combination thereof, and have an average dislocation density within the semiconductor heterostructure is less than about 10⁶ cm^-2. Bulk single crystals of AlN have a diameter greater than about 25 mm and dislocation densities of about 10,000 cm^-2 or less, and high-quality AlN substrates have surfaces of any desired crystallographic orientation fabricated from these bulk crystals.